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HL 68: Nitrides: Preparation and characterization II
Thursday, March 19, 2020, 15:00–16:45, POT 112
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15:00 |
HL 68.1 |
Impact of high free-carrier concentrations on optical properties of cubic GaN — •Elias Baron, Rüdiger Goldhahn, Michael Deppe, Donat J. As, and Martin Feneberg
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15:15 |
HL 68.2 |
Absolute internal quantum efficiency of GaInN/GaN quantum wells under steady state conditions — •Savutjan Sidik, Philipp Henning, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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15:30 |
HL 68.3 |
Size-effect of donors on the lattice parameters of wurtzite GaN — •Elias Kluth, Karsten Lange, Matthias Wienecke, Jürgen Bläsing, Hartmut Witte, Armin Dadgar, Rüdiger Goldhahn, and Martin Feneberg
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15:45 |
HL 68.4 |
Electronic properties of ZnSi1−x−yGexSnyN2 semiconductors — •Masako Ogura, Dan Han, Monika Pointner, Laura Junkers, and Hubert Ebert
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16:00 |
HL 68.5 |
Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks — •Hartmut Witte, Cleophace Seneza, Prabha Sana, Christoph Berger, Armin Dadgar, and André Strittmatter
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16:15 |
HL 68.6 |
100% quantum efficiency in III-nitride quantum wells at low temperatures: experimental verification by time-resolved photoluminescence — •Philipp Henning, Savutjan Sidik, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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16:30 |
HL 68.7 |
V-groove patterning of 3C-SiC/Si(001) substrates for cubic GaN epitaxy — •Mario Littmann, Dirk Reuter, and Donat J. As
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