Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 69: Quantum dots and wires III
HL 69.6: Talk
Thursday, March 19, 2020, 17:00–17:15, POT 151
Monolithic co-integration of III-V compound semiconductors on silicon using a multiple step relaxation technique — •Ramasubramanian Balasbramanian1, Vitalii Sichkovskyi1, Johann Peter Reithmaier1, Larisa Popilevsky2, Gadi Eisenstein2, Galit Atiya3, and Yaron Kauffmann3 — 1University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germnany — 2Russel Berrie nanotechnology Institute, Technion, Haifa 32000, Israel — 3Material Science and Engineering Dep., Technion, Haifa 32000, Israel
Monolithic co-integration of III-V compound semiconductors on Si intends to combine advantages of both materials in a single chip. Si possesses excellent electronic, thermal and mechanical properties, whereas III-V materials exhibit excellent photonic properties due to their direct band gap. Development of defects, due to the differences in thermal expansion coefficient and lattice constants between III-V materials and Si, are filtered using Dislocation Filtering Layers (DFLs) which are either strained layer super lattices or highly strained QDs. Here, we report on the integration of InP and GaAs on 5° off-cut Si wafers by MBE using DFLs. The grown structures are characterized using high resolution transmission electron microscopy (HRTEM), atomic force microscopy and photo luminescence (PL) spectroscopy. HRTEM studies showed an efficient dislocation reduction by DFLs. The InP based laser structure grown on top of such DFL buffer showed PL properties comparable to the reference one grown directly on InP . RWG lasers are being processed and results will be discussed during the conference.