Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 69: Quantum dots and wires III

HL 69.7: Talk

Thursday, March 19, 2020, 17:15–17:30, POT 151

Fabrication and Characterization of Reconfigurable Field Effect Transistors — •Muhammad Bilal Khan, Sayantan Ghosh, Slawomir Prucnal, René Hübner, Artur Erbe, and Yordan M. Georgiev — Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany

To complement scaling down of CMOS, new device concepts have been introduced. These concepts include undoped silicon nanowire (SiNW) based reconfigurable field effect transistors (RFETs). In an RFET, SiNWs are nickel silicided at both ends. This results in silicide-Si-silicide Schottky junctions. Two distinct gate electrodes are placed on these junctions. By controlling the electrostatic potential on the gate electrodes, the RFET is programmed to p- or n-polarity. We report on fabrication and electrical characterization of top-down fabricated SiNW based RFETs. Flash lamp annealing is used for silicidation instead of rapid thermal annealing for better control over the silicidation process. Different gate dielectrics are used to improve the device performance.