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HL: Fachverband Halbleiterphysik

HL 70: Spin phenomena in semiconductors

HL 70.4: Vortrag

Donnerstag, 19. März 2020, 15:45–16:00, POT 251

Extended electron spin dephasing in isotopically purified ZnSe — •Phillip A. Greve¹, Evgeny A. Zhukov¹, Erik Kirstein¹, Nataliia Kopteva², Irina A. Yugova^1,3, Alexander Pawlis⁴, Dimitri R. Yakovlev^1,5, Alexander Greilich¹, and Manfred Bayer¹ — ¹Experimentelle Physik Technische Universität Dortmund 44221 Dortmund Germany — ²Spin Optics Laboratory, St. Petersburg State University, Ul’anovskaya 1, Peterhof, St. Petersburg 198504, Russia — ³Physical Faculty of St. Petersburg State University, 198504 St. Petersburg, Russia — ⁴Department Physik, Universität Paderborn, 33098 Paderborn, Germany — ⁵Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

We demonstrate a very long spin dephasing time of electrons bound to defect centers in fluorine-doped isotopically purified ZnSe epilayer. The sample was implanted with fluorine after the MBE growth, which led to a broad defect band of high PL intensity about 0.5 eV under the free exciton transition of ZnSe. Using a time-resolved pump-probe Kerr rotation technique, we were able to measure a dephasing time over 300 ns at cryogenic temperatures. The g factor of 2 indicates a strong localization of electrons. The state characteristics and dependencies on temperature, magnetic field, and sample structure are discussed.