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HL: Fachverband Halbleiterphysik
HL 72: Focus Session: Functional Metal Oxides for Novel Applications and Devices III (joint session HL/DS)
Donnerstag, 19. März 2020, 15:00–16:30, POT 81
electronics, power electronics, high-electron-mobility transisitors, memristors, topological quantum computation and so on. These functionalities typically require homo- or heteroepitaxial layers of high crystallinity with bendable amorphous semiconducting oxides as an exception. This session sets a focus on growth of bulk and thin films, experimental and theoretical investigation of their physical properties as well as fabrication and characterization of demonstrator devices.
Organizers: Oliver Bierwagen (Paul-Drude-Institut für Festkörperelektronik, Berlin), Holger Eisele (TU Berlin), Jutta Schwarzkopf (Leibniz-Institut für Kristallzüchtung, Berlin) and Holger von Wenckstern (Universität Leipzig).
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15:00 | HL 72.1 | Ab-initio investigation of first-order Raman scattering in gallium oxide — •Rouven Koch, Pasquale Pavone, Dmitrii Nabok, and Claudia Draxl |
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15:15 | HL 72.2 | Raman-Spectroscopy of corundum-like α-Ga2O3 grown by HVPE — •Jona Grümbel, Pingfan Ning, Jürgen Bläsing, Dae-Woo Jeon, Martin Feneberg, and Rüdiger Goldhahn |
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15:30 | HL 72.3 | Raman spectroscopy as a tool to determine the Néel temperature of NiO thin films in correlation with their structural characteristics — •Johannes Feldl, Melanie Budde, Carsten Tschammer, Oliver Bierwagen, and Manfred Ramsteiner |
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15:45 | HL 72.4 | Phonons and free-carrier contributions of spinel ZnGa2O4 by spectroscopic ellipsometry — •Alwin Wüthrich, Martin Feneberg, Zbigniew Galazka, and Rüdiger Goldhahn |
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16:00 | HL 72.5 | Electric and Thermoelectric Properties of ZnGa2O4 Bulk Crystals — •Johannes Boy, Martin Handwerg, Rüdiger Mitdank, Zbigniew Galazka, and Saskia F. Fischer |
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16:15 | HL 72.6 | Low-frequency noise characterization of MOCVD-grown β-Gallium Oxide — •Christian Golz, Günter Wagner, Saud Bin Anooz, Zbigniew Galazka, Andreas Popp, Fariba Hatami, and W. Ted Masselink |