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HL: Fachverband Halbleiterphysik

HL 73: Semiconductor Surfaces (joint session O/HL)

HL 73.3: Vortrag

Donnerstag, 19. März 2020, 15:30–15:45, REC C 213

Structural and Electronic Properties of the FeSi(110) Surface — •Biao Yang¹, Martin Uphoff¹, Yi-Qi Zhang¹, Joachim Reichert¹, Ari P. Seitsonen², Andreas Bauer³, Christian Pfleiderer³, and Johannes V. Barth¹ — ¹Physics Department E20, Technical University of Munich, D-85748 Garching, Germany — ²Département de Chimie, École Normale Supréieure, 24 rue Lhomond, F-75005 Paris, France — ³Physics Department E51, Technical University of Munich, D-85748 Garching, Germany

Iron silicide (FeSi) is a fascinating material which has attracted numerous research efforts for decades.[1] It has B20 crystal structure featuring cubic unit cell without an inversion center. To gain insight into the unusual surface properties of this system, we successfully prepare the atomically flat FeSi(110) surface with the Ar ion sputtering and annealing treatment. By scanning tunneling microscopy (STM), we clearly resolve a step-terrace topography and the details of the atomic lattice. The atomically resolved STM images and DFT calculations give strong indications for the surface termination, where the topmost comprises of one Fe and one Si atom. Furthermore, a small energy gap of 80 meV close to the Fermi level is derived by scanning tunneling spectroscopy (STS). Intriguingly, two in-gap states are identified for the first time. References 1. V. Jaccarino, G. K. Wertheim, J. H. Wernick, L. R. Walker, S. Arajs. Phys. Rev. 1967, 160, 476.