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HL: Fachverband Halbleiterphysik
HL 74: Poster IIIA
HL 74.17: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/2OG
STM-induced excitonic luminescence of a 2D semiconductor — Delphine Pommier1, •Rémi Bretel1, Luis Parra López2, Florentin Fabre2, Andrew Mayne1, Elizabeth Boer-Duchemin1, Gérald Dujardin1, Guillaume Schull2, Stéphane Berciaud2, and Eric Le Moal1 — 1Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud, Université Paris-Saclay, F-91405 Orsay, France — 2Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
Transition metal dichalcogenides (TMDs) are 2D layered materials that have gained a lot of interest as their unique and tunable excitonic properties are very promising for new compact optoelectronic devices. To fully understand processes involving excitons requires studies at the nanometer scale. Scanning tunneling microscopy (STM) may be used to carry out such studies, as a local electrical source for the excitation of excitons in TMDs. In this work, we report the STM-induced light emission (STM-LE) of the semiconducting, direct bandgap monolayer (1ML) molybdenum diselenide (MoSe2) at room temperature in air. The emitted light is collected in transmission through an oil-immersion objective. STM-LE is compared with laser-induced photoluminescence. The emission is identified as the radiative decay of bright A exciton and the excitation mechanism here is found to be a resonant energy transfer, which contrasts with previous results from other electroluminescence studies on TMDs [1].
[1] Pommier et al, Physical Review Letters 123.2 (2019): 027402.