Dresden 2020 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 74: Poster IIIA
HL 74.19: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/2OG
Effect of ion irradiation on electrical and optical properties of molybdenum disulfide — •Zahra Fekri1, Phanish Chava2, Tommaso Venanzi3, Gregor Hlawacek4, Antony George5, Andrey Turchanin6, and Artur Erbe7 — 1HZDR — 2HZDR — 3HZDR — 4HZDR — 5University Jena — 6University Jena — 7HZDR
Since silicon transistors are reaching their physical limit to shrink, there is a need for the discovery of new materials to keep on with Moore’s law. Two-dimensional (2D) materials, which have gained enormous attention since the discovery of graphene, could enable transistors to keep scaling. MoS2 is among the most well-known 2D materials due to its unique properties. Tunable bandgap, high mobility, and flexibility make MoS2 a promising material in future electronics, sensing and photo-detection applications. The ability to modify materials at the atomic scale is crucial for the fabrication of novel nanodevices. The electrical and optical properties of MoS2 strongly depend on defects. Deficiencies in the structure can be detected by spectroscopic techniques which provide the understanding of new functionalities of MoS2 based devices. Helium ion microscope promises to be a suitable tool to create controllable defects on 2D materials. A nice aspect of this method is that the electrical measurement can occur in situ in the microscope so that the effect of irradiation can be assessed immediately. This research focuses on modifying the electrical and optical properties of MoS2 based field effect transistor using helium ion microscope.