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HL: Fachverband Halbleiterphysik

HL 74: Poster IIIA

HL 74.20: Poster

Donnerstag, 19. März 2020, 15:00–17:30, P2/2OG

Optical characterization of ion implanted monolayer molybdenum dichalcogenides — •Minh Bui¹, Stefan Rost², Manuel Auge³, Jhih-Sian Tu¹, Sven Borghardt¹, Hans Hofsäss³, and Beata Kardynał¹ — ¹Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany — ²Peter Grünberg Institut (PGI-1 / IAS-1), Forschungszentrum Jülich, 52425 Jülich, Germany — ³II. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Monolayers (MLs) of semiconducting transition metal dichalcogenides (TMDCs) possess unique band structure leading to exotic optical properties, suitable for valley- and exciton-based optoelectronic applications. Tuning those properties is desirable to further exploit their potentials, for which deterministic doping is a viable technique that has proven suitable for bulk semiconductors. Here, implantation with low energy ions is explored as a method to introduce dopant atoms into TMDC MLs, with the prototypical system of Se-implanted MoS₂. Isoelectronic substitution of Se for S in MoS₂ converts the material into MoSe_2xS_2(1−x) without creating free carriers. For the optimal compromise between Se incorporation and defect formation, different implantation conditions were investigated, including treatment for healing defects. Structural and electronic effects of implantation on MLs were studied using Raman, reflectance and photoluminescence spectroscopies. Implantation levels much higher than required for doping, up to 20%, were achieved. Results of MoSe₂ implanted with P for p-type dopants, and Cr for substitution in Mo sites are also discussed.