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HL: Fachverband Halbleiterphysik
HL 74: Poster IIIA
HL 74.21: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/2OG
2D van der Waals heterostructures for electronic devices — •Phanish Chava1, Vivek Koladi1, Himani Arora1, Kenji Wanatnabe2, Takashi Taniguchi2, Manfred Helm1, and Artur Erbe1 — 1Helmholtz Zentrum Dresden Rossendorf, Bautzner Landstrasse 400, 01328 — 2National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
The interlayer van der Waals(vdWs) interaction allows 2D materials to be easily stacked to form various heterostructures with unique and novel features. Layer dependent electronic band structure and the absence of surface dangling bonds make them promising candidates for electronic devices. In this study, we focus particularly on devices that enable lower operating voltages thereby forming a basis for energy efficient circuits. This is done by investigating the idea of a Tunnel Field Effect Transistor (TFET) based on vdWs hetrostructures.