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HL: Fachverband Halbleiterphysik
HL 74: Poster IIIA
HL 74.5: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/2OG
Magnetic resonance studies of spin defects in a Van der Waals crystal — •Matthias Diez1, Andreas Gottscholl1, Christian Kasper1, Victor Soltamov1, Andreas Sperlich1, and Vladimir Dyakonov1,2 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg
Spin defects in wide-bandgap semiconductors have shown to be promising systems in terms of realising quantum information processing, quantum sensing and quantum computing. While spin centers in 3D materials especially the NV-center in diamond or silicon vacancy in silicon carbide have been extensively studied, similar defects in 2D materials are yet to be discovered. In this work, we use optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR) to study a recently found spin defect in irradiated hexagonal boron nitride (hBN) in more details [1]. In particular, we identified the defect to be a negatively charged boron vacancy (VB−) and determined the parameters of its spin Hamiltonian by analyzing the temperature, illumination and angular dependencies. The defect has a triplet ground state (S=1) with a zero field splitting of ≈ 3.5 GHz. These results stimulate the search also for other types of spin defects in 2D materials and heterostructures.
[1] Gottscholl et al., arXiv:1906.03774 (2019)