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HL: Fachverband Halbleiterphysik
HL 75: Poster IIIB
HL 75.17: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/3OG
Ab initio study on structural and electronic properties of carbon defects in SiC(0001)/SiO2 systems — •Takuma Kobayashi1,2 and Yu-ichiro Matsushita1 — 1Tokyo Institute of Technology, Yokohama, Japan — 2Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany
Silicon Carbide (SiC) has been regarded as a promising material for power devices owing to its superior physical properties, such as wide bandgap and high critical field strength. SiC metal-oxide-semiconductor field effect transistors (MOSFETs) have, however, suffered from their unexpectedly low channel mobility due to the high interface state density of SiC/SiO2 systems. So far, carbon byproducts created during the oxidation of SiC were pointed out as a strong candidate for the interface states. In the present study, we report the stable atomic structures of carbon defects in SiC, silicon dioxide (SiO2), and those at their interface, depending on the oxidation environment. We also discuss their impact on the device performance based on the calculated defect levels.