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HL: Fachverband Halbleiterphysik
HL 75: Poster IIIB
HL 75.1: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/3OG
Classification of Silicon Carbide for Maser Application by Electron Paramagnetic Resonance — •S. Scherbel, A. Gottscholl, C. Kasper, V. Soltamov, V. Dyakonov, and A. Sperlich — Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg
Although masers have been known for decades, their application as low noise amplifier is still limited due to their operating conditions, requiring vacuum and cryogenic temperatures. Hence, our aim is to build a room-temperature maser based on spin-carrying defects in the technologically advanced material silicon carbide (SiC). To generate such spin-carrying defects, in our case the negatively charged silicon vacancies (VSi), the SiC crystal was exposed to high-energy particles (electrons or neutrons). To obtain population inversion we optically pumped the ground state spin sublevels of VSi. By applying an external magnetic field we tuned the Zeeman splitting into resonance with an applied microwave frequency of 10 GHz [1]. Using magnetic resonance techniques, we quantified the population inversion within VSi spin sublevels for different SiC polytypes (4H, 6H) and irradiation methods for a wide range of irradiation doses. Finally, we studied the influence of optical pump power, temperature and samples orientation with respect to the external magnetic field on the population inversion. Our systematic study specifies the parameters, necessary for SiC to become a suitable maser system with a wide-ranging applicability.
[1] H. Kraus et al., Nat. Phys. 10, 152 (2014)