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HL: Fachverband Halbleiterphysik
HL 75: Poster IIIB
HL 75.21: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/3OG
Confocal microscopy of irradiation induced defects in silicon carbide — •Yuan Gao2, Michael Hollenbach1,2, Yonder Berencen1, Gregor Hlawacek1, Manfred Helm1,2, and Georgy Astakhov1 — 1Institute of Ion Beam Physics and Material Research, Helmholz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2Technische Universität Dresden, Dresden, Germany
Photons, as the information carrier in quantum technology, can be generated from point defects in crystal structures. Silicon carbide is a promising host material for such defects that can be created by ion implantation of different types [1]. Compared to other ions, helium ions can create defects with less crystal damages and high coherence. For further applications, defects need to be integrated with nanostructures. This can be done by focused ion beam technology [2]. However, the achieved resolution using protons is not sufficient for nanometer range. Here, we present an approach to create defects locally. In this approach, silicon vacancies are fabricated with a Helium Ion Microscope using different fluences at an energy of 25keV. Upon irradiation, defects are systematically characterized by confocal spectroscopy. It is shown that the defects can be created near the surface by this approach. Moreover, the fluence dependence of the count rate and the lateral resolution are investigated. We demonstrate that this approach holds promises for fabricating silicon carbide based quantum nanostructures.
[1] J. F. Wang, et. al, ACS Photonics 6(7),1736-1743(2019). [2] H. Kraus, et. al, Nano Lett. 17(5),2865-2870(2017).