Dresden 2020 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 75: Poster IIIB

HL 75.27: Poster

Donnerstag, 19. März 2020, 15:00–17:30, P2/3OG

Electrical readout of NV- centers — •Lina Todenhagen and Martin S. Brandt — Walter Schottky Institut and Physik-Department, Technische Universität München, Garching, Germany

The charged nitrogen-vacancy center (NV- center) in diamond is a remarkable option for various quantum technologies. The recently demonstrated, electrical readout dramatically reduces the complexity of NV-based sensing setups compared to the currently more widely used optical readout. Here, we report on the optimization of the electrical readout, in particular by improving the laser pulse sequences used for excitation, photoionization and reset of the NV- center, maximizing the electrically detected contrast.