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HL: Fachverband Halbleiterphysik

HL 75: Poster IIIB

HL 75.5: Poster

Donnerstag, 19. März 2020, 15:00–17:30, P2/3OG

In-situ Fabrication of Magnetic Topological Insulator Devices — •Max Vaßen-Carl¹, Michael Schleenvoigt¹, Tobias W. Schmitt², Abdur R. Jalil¹, Stefan Trellenkamp³, Florian Lentz³, Gregor Mussler¹, Peter Schüffelgen¹, and Detlev Grützmacher¹ — ¹Peter Grünberg Institute, Forschungszentrum Jülich & JARA Jülich-Aachen Research Alliance, 52425 Jülich, Germany — ²JARA-FIT Institute Green IT, RWTH Aachen University, 52062 Aachen, Germany — ³Helmholtz Nano Facility, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Magnetic topological insulators (MTIs), which have their Fermi level in the exchange gap exhibit the quantum anomalous Hall (QAH) effect with chiral edge states. The latter are of high interest to spintronic applications. Moreover, by proximity coupling the MTI to a superconductor (SC), chiral Majorana edge modes are expected to arise. To access the QAH regime in MTIs, it is beneficial to avoid ambient conditions or chemicals during device fabrication, which may disturb the sensitive surface states. This makes ultra-high vacuum (UHV) fabrication techniques highly interesting for these materials. I will present a UHV technique that enables molecular beam epitaxy (MBE) growth of MTIs ((Cr)z(Bi,Sb)2-z(Te,Se)3) in selected areas on silicon substrates. In a second step, a normal conductor or SC can be deposited in-situ onto the MTI utilizing an angular arrangement, effectively creating MTI devices in the MBE without breaking the vacuum.