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HL: Fachverband Halbleiterphysik
HL 76: Poster IIIC
HL 76.14: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/4OG
Organic field effect transistors based on PNDIT2 polymers — •Annika Morgenstern1, Apoorva Sharma1, Georgeta Salvan1, Dietrich R. T. Zahn1, and Michael Sommer2 — 1Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz — 2Polymer Chemistry, Chemnitz University of Technology, D-09107 Chemnitz
Organic field effect transistors (OFETs) based on polymers have attracted significant attention thanks to the availability of high-mobility polymers. Polymers are cost-efficient in production and can be deposited on almost any substrate. There are already numerous studies dedicated top-gate geometry OFETs and p-type polymers. These studies showed that the mobility is highly influenced by the chain length and the crystallinity of the polymer. Studies of n-type polymers in bottom-gate geometry are scarce. Here we present the characterization of bottom-gate OFETs based on the n-type polymer PNDIT2. This geometry is useful, for example, for further measurements of the photoinduced charge transport by light irradiation. The PNDIT2 films were deposited by spin coating onto prestructured substrates having Au source and drain electrodes on top of a 232,4 nm SiO2 gate dielectric layer. An additional PMMA layer was required to prevent the oxidation of the polymer film. The influence of the molar mass of the polymer, of the crystalline order of the films and of the channel length on the transistor characteristics and the electron mobility was determined.