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HL: Fachverband Halbleiterphysik
HL 76: Poster IIIC
HL 76.8: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/4OG
Nano-floating gate memory based on lead halide perovskite nanocrystals — •Tianhao Jiang1,2, Martin Stutzmann1, Xiujuan Zhang2, and Jiansheng Jie2 — 1Walter Schottky Institut, TUM, Munich, Germany — 2Institute of Functional Nano & Soft Materials, Suzhou, China
Lead halide perovskites have been extensively investigated in a host of optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The halogen vacancy defects arising from halogen-poor growth environment are normally regarded as an unfavorable factor to restrict the device performance. Here,for the first time, we demonstrate the utilization of the vacancy defects in lead halide perovskite nanostructures for achieving high-performance nano-floating gate memories (NFGMs). CH3NH3PbBr3 nanocrystals (NCs) were uniformly decorated on CdS nanoribbon (NR) surface via a facile dip-coating process, forming a CdS NR-CH3NH3PbBr3 NCs core-shell structure. Significantly, owing to the existence of sufficient carrier trapping states in CH3NH3PbBr3 NCs, the hybrid device possessed an ultra-large memory window up to 77.4 V, a long retention time of 12 000 s, a high current ON/OFF ratio of 7*107, and a long-term air stability for 50 days. This work paves the way toward the fabrication of new-generation, high-capacity nonvolatile memories using lead halide perovskite nanostructures.