Dresden 2020 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 76: Poster IIIC
HL 76.9: Poster
Thursday, March 19, 2020, 15:00–17:30, P2/4OG
Electrical characterization of deep levels inside sulfur hyperdoped silicon based on graded junction calculations — •Erica F. Warth Pérez Arias1, Arne Ahrens1, Anna L. Baumann2, Wolfgang Schade2, and Michael Seibt1 — 1University of Goettingen, IV. Physical Institute, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2Fraunhofer Heinrich Hertz Institute HHI, Am Stollen 19H, 38640 Goslar, Germany
Semiconductor devices are the constituent of a considerable amount of technologies such as transistors, solar cells and LEDs. The performance of such devices can be changed by deep defects inside the material, which can lead on one hand to a decreased diffusion length of charge carriers and increased current leakages [1]. On the other hand, deep levels at very high concentrations may form intermediate bands, which is well established for sulfur hyperdoped silicon [2], leading to an increased infrared absorption in the case of solar cells or photodetectors. Nearly exponential sulfur concentration depth profiles have been observed in such materials [3], giving rise to graded p-n junctions.
Therefore, this work analyses the depth profile of deep traps inside sulfur hyperdoped silicon using CV and DLTS measurements, under the implementation of a graded p-n junction model.
[1] K. A. Jackson et. al.; Handbook of Semiconductor Technology, Deep Centers in Semiconductors Vol. 1. WILEY-VCH (2000)
[2] M.T. Winkler et al.; Phys. Rev. Lett. 106, 178701 (2011)
[3] P. Saring, et. al. ; Appl. Phys. Lett. 103, 061904 (2013)