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HL: Fachverband Halbleiterphysik
HL 79: Quantum dots and wires IV
HL 79.2: Vortrag
Freitag, 20. März 2020, 09:45–10:00, POT 151
Polarization Resolved Excitation Spectroscopy on GaAs Quantum Dots — •Caspar Hopfmann1, Robert Keil1, Nand Lal Sharma1, Fei Ding2, and Oliver Schmidt1, 3 — 1Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany — 2Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany — 3Material Systems for Nanoelectronics, Technische Universität Chemnitz, 09107 Chemnitz, Germany
Entangled photon sources based on Aluminum droplet etched GaAs quantum dots embedded in a AlGaAs matrix have attracted considerable research interest for applications such as quantum entanglement swapping [1]. In order to use these devices for more advanced quantum optical experiments - such as photonic cluster states [2] - a keen understanding of the quantum dot electronic structure of both fundamental and excited states is essential. We employ combined quasi-resonant and polarization resolved photo excitation spectroscopy in order to investigate the electronic structure of GaAs quantum dots comprehensively.
[1] Zopf et. al. PRL 123, 160502 (2019)
[2] Schwartz et. al. Science, 354.6311 (2016)