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HL: Fachverband Halbleiterphysik

HL 8: Nitrides: Devices

HL 8.7: Vortrag

Montag, 16. März 2020, 11:00–11:15, POT 51

Characterization of GaN-based FinFETs Grown by Molecular Beam Epitaxy — •Fabian Becker, Florian Pantle, and Martin Stutzmann — Walter Schottky Institut and Physics Department, Technische Universität München, Garching, Germany

Gallium nitride (GaN) is a promising candidate for high power and high frequency electronic applications due to its superior material properties like a high electronic breakdown field, large bandgap, high electron mobility and high electron saturation velocity. An approach to overcome spacial limitations of planar devices is the utilization of vertical 3D structures like nanofins. GaN fin-shaped field effect transistors (FinFETs) gain increasing interest due to a higher active channel area and a better controllability of the gate. Further, GaN nanofins selectively grown by molecular beam epitaxy (MBE) are expected to have a higher crystal quality and reduced defect densities compared to their counterparts fabricated by top-down etching techniques.

Here, we present the fabrication and electrical characterization of MBE-grown GaN FinFETs with various fin dimensions on different substrates. In addition, the nanofins are evaluated by scanning electron microscopy and characterized by Raman and photoluminescence spectroscopy.