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HL: Fachverband Halbleiterphysik
HL 81: Semiconductor lasers II
HL 81.4: Vortrag
Freitag, 20. März 2020, 10:45–11:00, POT 81
Dynamical properties of quantum dot lasers with and without p-doping and tunneling injection quantum wells in the active region — •Sven Bauer1, Vitalii Sichkovskyi1, Florian Schnabel1, Anna Sengül1, Ori Eyal2, Igor Khanonkin2, Gadi Eisenstein2, and Johann Peter Reithmaier1 — 1Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany — 2Electrical Engineering Department and Russell Berrie Nanotechnology Institute, Technion, Haifa 32000, Israel
The performance of directly modulated quantum dot (QD) lasers, used for 1.55 µm telecommunication, is limited by the intraband carrier relaxation time as well as thermally broadened hole distribution effects. These properties could be improved by using a so-called tunnel injection (TI) scheme or the introduction of p-type doping into the active region of a high-speed laser design. Conventional QD lasers are directly compared to QD lasers with TI, p-type doping and both. The QD density and uniformity are nominally the same for all devices. Small signal modulation measurements yielded higher bandwidths for the QD lasers in comparison to the TI QD lasers. P-type doping greatly improved the performance of TI QD lasers and more refined doping profiles are promising to further enhance the modulation properties. Large signal modulation measurements showed a maximum data rate of more than 25 Gbit/s for both laser types, which is already suitable for telecom applications.