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09:30 |
HL 8.1 |
Extreme laser background suppression for resonant fluorescence of a quantum emitter — •Meryem Benelajla, Elena Kammann, and Khaled Karrai
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09:45 |
HL 8.2 |
Realizing tunnel junctions in MOVPE-grown AlGaN-based UVC LEDs emitting at 233 nm — •Verena Montag, Luca Sulmoni, Frank Mehnke, Martin Guttmann, Christian Kuhn, Norman Susilo, Johannes Glaab, Tim Wernicke, Markus Weyers, and Michael Kneissl
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10:00 |
HL 8.3 |
GaN:Ge as transparent conductive nitride contact layer for blue tunnel-junction LEDs — •Christoph Berger, Silvio Neugebauer, Cleophace Seneza, Hartmut Witte, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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10:15 |
HL 8.4 |
Effects of degradation on the electrooptical properties of UVB-LEDs measured by temperature dependent electroluminescence spectroscopy — •Jakob Höpfner, Priti Gupta, Martin Guttmann, Jan Ruschel, Johannes Glaab, Tim Kolbe, Arne Knauer, Tim Wernicke, Markus Weyers, and Michael Kneissl
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10:30 |
HL 8.5 |
Speeding up LED design using experimental device data in the nextnano software — •Maria Cecilia da Silva Figueira, Alex Trellakis, Takuma Sato, Carola Burkl, and Stefan Birner
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10:45 |
HL 8.6 |
Thermal management of ultraviolet LEDs and VCSELs: computer-aided multiphysics optimization — •Giulia Cardinali, Filip Hjort, Michael Alexander Bergmann, Johan Gustavsson, and Åsa Haglund
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11:00 |
HL 8.7 |
Characterization of GaN-based FinFETs Grown by Molecular Beam Epitaxy — •Fabian Becker, Florian Pantle, and Martin Stutzmann
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11:15 |
HL 8.8 |
AlGaN-based UVC-LEDs on AlN/sapphire templates with low threading dislocation density — •Daniel Hauer Vidal, Norman Susilo, Arne Knauer, Sylvia Hagedorn, Johannes Enslin, Tim Wernicke, Markus Weyers, and Michael Kneissl
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