Dresden 2020 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)

HL 9.10: Vortrag

Montag, 16. März 2020, 12:15–12:30, POT 81

In-plane anisotropy of the photon-helicity induced linear Hall effect in few-layer WTe₂ — •Simon Steinhauser^1,2, Paul Seifert^1,2, Florian Sigger^1,2, Jonas Kiemle^1,2, Kenji Watanabe³, Takashi Taniguchi³, Christoph Kastl^1,2,4, Ursula Wurstbauer^1,2,5, and Alexander Holleitner^1,2 — ¹Walter Schottky Institut and Physics Department, Technical University of Munich, Am Coulombwall 4a, D-85748 Garching, Germany — ²Munich Center for Quantum Science and Technology (MCQST), Schellingstrasse 4, D-80799 München, Germany — ³Advanced Materials Laboratory, Tsukuba, Ibaraki 305-0044, Japan — ⁴Molecular Foundry, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, USA — ⁵Institute of Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germany

Using Hall photovoltage measurements, we demonstrate that a linear transverse Hall voltage can be induced in few-layer WTe₂ under circularly polarized illumination. We find that the photon-helicity induced Hall effect is strongly anisotropic with respect to the crystal axis. Our results are consistent with the Berry curvature and its dipolar distribution due to the breaking of inversion symmetry. We also studied how the Hall voltage changes with varying layer numbers. Time resolved optoelectronic autocorrelation spectroscopy shows the comparatively long spin lifetime of carriers caused by the momentum-indirect electron and hole pockets in WTe₂.