Dresden 2020 – scientific programme
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 15: Postersession KFM
KFM 15.24: Poster
Thursday, March 19, 2020, 16:00–18:30, P2/1OG
Limitations of Quantitative Backscatter Electron Imaging at Low Voltages in the SEM — •Markus Löffler1, Aránzazu Garitagoitia Cid1,2,3, Rüdiger Rosenkranz2,4, and Ehrenfried Zschech2 — 1Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Germany — 2Fraunhofer-Institut für Keramische Technologien und Systeme (IKTS), Dresden, Germany — 3Nebrija University, Department of Materials Science, Campus Dehesa de la Villa, Madrid, Spain — 4Robert-Bosch GmbH
The design of the Zeiss Gemini SEM column with the energy selective backscatter (EsB) detector allows for surface-sensitive, low-voltage backscatter electron imaging.
Here we present results of the characteristic dependencies of the (filtered) low-voltage backscatter signal intensity on imaging parameters as well as on the atomic number (Z). Using proper calibration, contrasts between compounds can be predicted and the limitations of Z-sensitivity explored.
It was found that e.g. carbon on silicon can be detected with single-nm precision. Furthermore, the ability to distinguish even small differences in atomic number make this method an ideal tool for distinguishing similar compounds without strong edge or charging artifacts. It enables the operator to identify regions of compounds within the sample without the need for EDX (which typically requires much higher energies) and e.g. even allows for the identification of certain polymers in thin films that are sensitve to high energy electron irradiation.