Dresden 2020 – scientific programme
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MA: Fachverband Magnetismus
MA 10: Focus Session: Spin-Charge Interconversion (joint session MA/HL)
MA 10.4: Invited Talk
Monday, March 16, 2020, 16:45–17:15, HSZ 04
Ferroelectric control of the spin-to-charge conversion in the ferroelectric Rashba semiconductor GeTe — Sara Varotto1, Luca Nessi1, Stefano Cecchi2, Paul Noel3, Simone Petrò1, Alessandro Novati1, Raffaella Calarco2, Matteo Cantoni1, Laurent Vila3, Jean-Philippe Attané3, Riccardo Bertacco1, and •Christian Rinaldi1 — 1Dipartimento di Fisica, Politecnico di Milano, via Colombo 81, 20133 Milano, Italy — 2Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany — 3Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-SPINTEC, F-38000 Grenoble, France
Scalable and energy efficient spin-orbit logic has been very recently pointed out by Intel as technologically suitable computing alternative to CMOS devices [1]. It comprises an electrically driven memory element, with the spin-orbit-based detection of the state performed by spin-to-charge conversion. In this talk, we show that the ferroelectric Rashba semiconductor Germanium Telluride offers memory as well as spin-orbit readout in a silicon-compatible semiconductor. GeTe possesses a giant bulk Rashba-like spin texture, which can be reversed by its non-volatile ferroelectricity [2]. Here we demonstrate the switchability of bulk GeTe through gate electrodes, enabling the electric control of spin textures. Spin pumping measurements in Fe/GeTe heterostructures revealed the ferroelectric control of the spin to charge conversion, paving the way to single-compound spin-orbit logic devices.
[1] S. Manipatruni, Nature 565, 35 (2019); [2] C. Rinaldi et al., Nano Letters 18, 2751 (2018)