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MA: Fachverband Magnetismus
MA 23: Functional Antiferromagnetism
MA 23.2: Vortrag
Dienstag, 17. März 2020, 09:45–10:00, HSZ 401
Current-induced electrical switching of antiferromagnetic MnN — •Mareike Dunz1, Tristan Matalla-Wagner1, and Markus Meinert2 — 1Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University — 2Department of Electrical Engineering and Information Technology, TU Darmstadt
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Recently, it was shown that switching of magnetic moments via spin-orbit torque is possible in epitaxial films of antiferromagnetic NiO [1]. A spin-polarized current is generated in adjacent Pt layers and exerts a torque on the magnetic moments in the antiferromagnetic film.
Here, we report experiments on spin-orbit torque induced switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high Néel temperature [2]. We demonstrate the switching in a Ta / MnN / Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependencies of the switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn2Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque.
[1] T. Moriyama et al., Sci Rep. 8, 14167 (2018)
[2] M. Dunz et al., arXiv : 1907.02386v2