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MA: Fachverband Magnetismus
MA 23: Functional Antiferromagnetism
MA 23.3: Vortrag
Dienstag, 17. März 2020, 10:00–10:15, HSZ 401
Mechanism of Néel Order Switching in Antiferromagnetic Thin Films — Lorenzo Baldrati1, Olena Gomonay1, Andrew Ross1,2, Mariia Filianina1,2, Romain Lebrun1, Rafael Ramos3, Cyril Leveille1, •Felix Fuhrmann1, Thomas Forrest4, Francesco Maccherozzi4, Sergio Valencia5, Florian Kronast5, Eiji Saitoh3, Jairo Sinova1, and Mathias Kläui1,2 — 1Johannes Gutenberg-University Mainz, Germany — 2Graduate School of Excellence Materials Science in Mainz, Germany — 3WPI-Advanced Institute for Materials-Research, Tohoku University, Japan — 4Diamond Light Source, Oxfordshire, United Kingdom — 5Helmholtz-Zentrum Berlin, Germany
Antiferromagnetic insulators (AFMI) are promising candidates for spintronics. They have the potential for ultrafast operation, scalability, due to the lack of stray fields and insensitivity against external magnetic fields. While reading of the Néel order orientation n can be achieved electrically via the spin Hall magnetoresistance [1], the electrically writing of n is still a challenge. Here we show that one can electrically switch the antiferromagnetic moments with current pulses. The current is applied to a heavy metal (HM) to achieve spin accumulation by the spin hall effect at the AFMI-HM interface, exerting anti-damping like torques on the AFMI [2,3]. The resulting switching was investigated electrically and imaged by x-ray magnetic dichroism [4]. [1] Baldrati et al., PRB 98, 024422 (2018). [2] Moriyama et al., Sci. Rep. 8, 14167 (2018). [3] Chen et al., PRL 120, 207204 (2018). [4] Baldrati et al., PRL 123, 177201 (2019).