Dresden 2020 – scientific programme

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MA: Fachverband Magnetismus

MA 23: Functional Antiferromagnetism

MA 23.5: Talk

Tuesday, March 17, 2020, 10:30–10:45, HSZ 401

Spin-flop induced resistance modifications of antiferromagnetic Mn2Au thin films — •Stanislav Bodnar¹, Yurii Sckourski², Satya Prakash Bommanaboyena¹, Mathias Kläui¹, and Martin Jourdan¹ — ¹Institut für Physik, Johannes Gutenberg-Universität, Staudinger Weg 7, 55128 Mainz, Germany — ²Hochfeld-Magnetlabor Dresden (HLD-EMFL), Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany

Recently it has been shown that the Néel vector in Mn2Au can be switched by the application of current pulses via Néel spin-orbit torques [1]. The process of Néel vector switching was visualized by XMLD-PEEM [2]. In our work we report about the effect of magnetic field induced spin-flop transitions in antiferromagnetic Mn2Au(001) on the resistance of the samples. Two contributions of spin=flop induced resistance changes were observed on different time scales [3]. The first contribution gives rise to resistance reductions of ~1% and decay on a time scale of seconds. The second contribution is identified as a persistent anisotropic magnetoresistance effect, with a magnitu of ~0.1%. The results indicate that the origin of current induced large resistance modifications in Mn2Au are associated with domain wall resistance.

[1] S. Yu. Bodnar et al., Nat. Commun. 9, 348 (2018) [2] S. Yu. Bodnar et al., Phys. Rev. B 99, 140409(R) (2019) [3] S. Yu. Bodnar et al., arXiv 1909.12606 (2019).