Dresden 2020 – scientific programme
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MA: Fachverband Magnetismus
MA 24: Magnetic Heusler Compounds
MA 24.8: Talk
Tuesday, March 17, 2020, 11:15–11:30, HSZ 403
Computational design of quaternary Heusler compounds for reconfigurable spintronic devices — •Thorsten Aull1, Ersoy Şaşioğlu1, Igor V. Maznichenko1, Sergey Ostanin1, Arthur Ernst2, Ingrid Mertig1, and Iosif Galanakis3 — 1Institue of Physics, Martin Luther University Halle-Wittenberg, D-06120 Halle (Saale), Germany — 2Institute of Theoretical Physics, Johannes Kepler University Linz, Altenberger Straße 69, A-4040 Linz, Austria — 3Department of Materials Science, School of Natural Sciences, University of Patras, GR-26504 Patras, Greece
Reconfigurable spin tunnel diodes and transistors are a new concept in spintronics which unify memory and logic in a single device [1]. The realization of such devices require the use of materials with unique spin-dependent electronic properties such as spin-gapless semiconductors (SGSs) and half-metallic magnets (HMMs). Quaternary Heusler compounds offer a platform to design within the same family of compounds HMM and SGS with similar compositions and lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing the ab-initio calculations, we scan quaternary Heusler compounds and identify suitable candidates for reconfigurable spintronic devices combining the desirable properties [2]: (i) HMMs and SGSs with sizable spin gaps both below and above the Fermi level, (ii) high Curie temperature TC, (iii) negative formation energies, and (iv) convex hull energy distance less than 200 meV.
[1] E. Şaşioğlu et al., ACS Appl. Electron. Mater. 1, 1552-1559 (2019). [2] T. Aull et al., Phys. Rev. Materials (submitted).