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MA: Fachverband Magnetismus
MA 42: Posters Magnetism I
MA 42.43: Poster
Mittwoch, 18. März 2020, 15:00–18:00, P3
Growth of RuO2 thin films and determination of magnetic and transport properties — •Sven Becker1, Andrew Ross1,2, Romain Lebrun1, Lorenzo Baldrati1, Mathias Kläui1,2,3, and Gerhard Jakob1,2 — 1Institute of Physics, Johannes Gutenberg-University Mainz, 55128 Mainz, Germany — 2Graduate School of Excellence Materials Science in Mainz, 55128 Mainz, Germany — 3Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
Recent theoretical studies predict a novel magnetoresistance effect, present in some collinear antiferromagnets with low crystal symmetry. The so called crystal Hall Effect [1] could permit one to detect electrically not only the direction of the antiferromagnetic Néel order but also its orientation. One candidate for the observation of this phenomena is the metallic antiferromagnet RuO2. To be able to experimentally measure this predicted effect, one needs to fabricate high quality single crystalline samples with large antiferromagnetic domains. Here we show the growth of high quality thin films of RuO2 on TiO2 substrates by pulsed laser deposition. To determine transport properties continuous films have been patterned into Hall bars by e-beam lithography and argon ion etching. Unusual transport properties have been observed in RuO2/TiO2 as well as Pt/TiO2 samples leading us to the conclusion that reductive conditions during the etching process leads to the modification of the TiO2 substrate surface. [1] L. Smejkal et al., arXiv:1901.00445 (2019)