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MA: Fachverband Magnetismus

MA 54: Spin: Transport, Orbitronics and Hall Effects II

MA 54.3: Vortrag

Donnerstag, 19. März 2020, 15:30–15:45, HSZ 403

Phenalenyl-based Organic Barriers for Tunnel Junctions — •Neha Jha¹, Christian Denker¹, Anand Pariyar², Pavan K. Vardhanapu², Heba S. Mohamad¹, Amir Azinfar¹, Arne Ahrens³, Ulrike Martens¹, Christiane A. Helm¹, Michael Seibt³, Swadhin K. Mandal², and Markus Münzenberg¹ — ¹Institut für Physik, Universität Greifswald, Germany — ²Department of Chemical Sciences, IISER, Kolkata, India — ³IV. Physikalisches Institut, Universität Göttingen, Germany

Phenalenyl (PLY) based molecules are appealing for spintronics as demonstrated by the formation of a spinterface, showing tunnel magneto-resistance close to room temperature [1].

Here, we compare different kinds of molecules (PLY, ZMP, PLY-Cu[2]) as barrier material. In addition, we introduce a new 3-D shadow mask technology allowing for junction sizes down to 3x6 µ m². AFM and TEM imaging indicate sharp interfaces. Consequently, the current depends non-linearly on the voltage. The resistance depends exponentially on the barrier-thickness and shows no significant temperature dependence. This evidences tunneling as conduction mechanism. Magneto-resistive characteristics appear applying a few mV, while memristive properties require voltages in the volt range. Memristive resistance changes up to a factor of 2 are found for all three types of PLY, while magneto-resistive changes differ for the types of molecules and can also be as high as a factor of 2.

[1] K. V. Raman et al., Nature 493, p. 509 (2013)

[2] A. Mukherjee et al., J. Chem. Sci., 123, p. 139 (2011)