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MM: Fachverband Metall- und Materialphysik
MM 18: Poster Session I
MM 18.2: Poster
Montag, 16. März 2020, 18:15–20:00, P4
Detection and characterisation of amorphous silicon nanoclusters in laser-annealed silicon-rich silicon oxide via STEM — •Lukas Richert1, Christoph Flathmann1, Tobias Meyer1, Hendrik Voigt1, 2, and Michael Seibt1 — 1IV. Physical Institute, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2currently at Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
Low-dimensional silicon such as crystalline or amorphous silicon nanostructures exhibit room-temperature photoluminescence in the visible range, which may lead to low-cost optoelectronic integrated circuits and LED displays. Laser annealing of an amorphous silicon-rich silicon oxide (SRSO) film with laser powers of 40 to 50 mW results in the thermal decomposition of SRSO into silicon and silicon oxide.
As a result of annealing, three distinct morphologies can be identified. Laser damage results in a porous area, surrounded by a silicon nanocrystalline-rich material and, finally, a phase-separated amorphous region consisting of amorphous silicon nanoclusters (aSi-NCs) and silicon oxide. Cross-sectional TEM lamellae are analysed using fluctuation electron microscopy and electron energy loss spectroscopy to investigate the microstructure of the laser-annealed sample and verify the existence of aSi-NCs.