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MM: Fachverband Metall- und Materialphysik
MM 30: Poster Session II
MM 30.18: Poster
Dienstag, 17. März 2020, 18:15–20:00, P4
Magnetoresistance of ruthenium nanogranular wires — •Nikolai Mai1, Thomas Heinzel1, Mihai Cerchez1, Shibesh Dutta2, Anshul Gupta2, Shreya Kundu2, Giacomo Talmelli2, Florin Ciubotaru2, Zsolt Tokei2, and Christoph Adelmann2 — 1Heinrich Heine University Düsseldorf, Universitätsstr. 1, 40225, Düsseldorf — 2Imec, 3001 Leuven, Belgium
Ruthenium is a promising candidate to replace Cu for metallic interconnects as electronics continues to scale down. Although the resistivity of Ru is less dependent on the thickness of the interconnect than that of Cu, the scaling problem in this case manifests with increased resistivity as the size of the interconnect becomes comparable to the size of the grain and to the mean free path. Here we present longitudinal and transversal magnetoresistance measurements and IV characteristics of Ruthenium nanogranular wires discussing the role of the grain- interface in the Ru-resistivity.
The wires with a cross section less than 150 nm2 were obtained by a conformal atomic layer deposition of a 10 nm thick Ru film on SiO2 cores (height 25 nm and width 300 nm) patterned on 300 mm Si (100) wafers, followed by an anisotropic reactive ion etch. The wires were protected by SiNx/SiO2/SiNx passivation layer, whereas the Al contacts were formed after passivation opening at the ends of the wires. The samples were at 420∘C for 20 mins in forming gas.