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MM: Fachverband Metall- und Materialphysik

MM 42: Materials for Energy Storage and Conversion - Functional Materials

MM 42.3: Vortrag

Mittwoch, 18. März 2020, 16:15–16:30, IFW D

Understanding the charge trapping-detrapping in undoped- and carbon doped GaN — •Suchinder Sharma^1,2, Friederike Zimmermann¹, Jan Beyer¹, Eberhard Richter³, and Johannes Heitmann¹ — ¹Institute of Applied Physics, Technical University Bergakademie Freiberg, 09599 Freiberg, Germany — ²Helmholtz-Zentrum Dresden-Rossendorf, Helmholtz-Institute Freiberg for Resource Technology, 09599 Freiberg, Germany — ³Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

In the present contribution, we present our results on the thermoluminescence (TL) experiments on the GaN samples prepared by HVPE method, to understand the charge trapping-detrapping dynamics in the temperature range, 273-650 K. Interestingly, the undoped GaN sample showed a persistent luminescence (PersL) emission upon band-to-band and localized excitations (blue, green and red), which lasts for more than 9 h. Upon carbon doping, the PersL is quenched significantly, suggesting, that the population of defects responsible for the room temperature trapping-detrapping decreases with an increase in the carbon doping. Further, for low carbon containing sample, a new deep defect around 530 K is observed. The population of this defect further decreases for high carbon containing samples.