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O: Fachverband Oberflächenphysik

O 10: Oxides I: Growth and Characterization

O 10.13: Vortrag

Montag, 16. März 2020, 13:30–13:45, WIL B321

Surface diffusion of precursors in area-selective Atomic Layer Deposition — •Daniel Anders¹, Philip Klement¹, Jörg Schörmann¹, Christian Heiliger², and Sangam Chatterjee¹ — ¹Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Germany — ²Institute of Theoretical Physics, Justus Liebig University Giessen, Germany

Bottom-up nanofabrication by area-selective Atomic Layer Deposition (ALD) is expected to become a key technology in the fabrication of sub 5-nm semiconductor-devices. ALD eliminates conventional top-down alignment errors by limiting the deposition to specific areas. Surface diffusion of precursors becomes important as precursors may adsorb to no-growth areas and diffuse towards growth areas leading to previously unconsidered phenomena.

Here we show the impact of precursor surface diffusion in area-selective ALD of TiO2 on SiO2. We find strongly increased growth rates on substrates with pattered poly(methyl methacrylate) masks and a non-uniform topography. We apply a kinetic Monte-Carlo simulation model for the growth process based on different diffusion coefficients on different surfaces. The numerical results agree excellently with the experimental observations and allow us to deduce the different diffusion lengths. This work facilitates the understanding of surface diffusion processes in area-selective deposition, and enables the control of area-selective deposition on small scales.