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O: Fachverband Oberflächenphysik
O 10: Oxides I: Growth and Characterization
O 10.4: Vortrag
Montag, 16. März 2020, 11:15–11:30, WIL B321
Strongly strained VO2 thin film growth — •Simon Fischer1, Jan Ingo Flege2, Michael Foerster3, Lucia Aballe3, Andrea Locatelli4, Tevfik Onur Menteş4, Jens Falta1, and Jon-Olaf Krisponeit1 — 1Institute of Solid State Physics, University of Bremen, Germany — 2Applied Physics and Semiconductor Spectroscopy, BTU Cottbus, Germany — 3ALBA Synchrotron Light Facility, Barcelona, Spain — 4Elettra Sincrotrone Trieste, Italy
The semiconductor-metal transition temperature of VO2 strongly shifts as a result of strain applied along the rutile c axis, making it relevant for various switching applications such as smart coatings and sensors. In the past this has been demonstrated, for instance, through the application of epitaxial strain on TiO2 substrates.
We extend this tailoring approach by utilizing the much larger lattice mismatch of 8.78 % occurring in the VO2/RuO2 system for orientations where the c axis lies in-plane. Depositing vanadium oxide by atomic oxygen-supported reactive MBE on an oxidized Ru(0001) template, we have grown VO2 thin films on single domain RuO2 islands with varying orientation. Locally resolved electron spectroscopy was used to ascertain the correct stoichiometry of the grown VO2 films on all template island types. Low energy electron diffraction reveals the VO2 films to grow indeed fully strained on RuO2(110) but fully relaxed on RuO2(100).
Hence, the presented template allows simultaneous access to a remarkable strain window ranging from bulk-like structures to massively strained regions.