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O: Fachverband Oberflächenphysik
O 103: Topology and Symmetry Protected Materials I
O 103.7: Vortrag
Donnerstag, 19. März 2020, 12:00–12:15, WIL A317
Electronic structure of antimonene layers on Bi2Se3: insight from ab-initio calculations — •Kris Holtgrewe1,2, Conor Hogan3, and Simone Sanna1,2 — 1Justus Liebig University, Giessen, Germany — 2Center for Materials Research, Giessen, Germany — 3CNR-ISM, Rome, Italy
Topological insulators exhibit unconventional physical effects that have attracted the interest of the scientific community, especially when coupled to trivial insulators. A topologically insulating Bi2Se3 substrate covered by the trivial insulator antimonene is an ideal testbed to study the interfacial phenomena [1], and is furthermore interesting for applications such as topological pn-junctions [2].
Much research effort has been dedicated to the preparation of antimony layers on Bi2Se3 surfaces [3] and recently, the phase transition between two phases of the system has successfully been explained by ab-initio thermodynamics [4]. However, the Sb-coverage dependent spin texture is still not fully understood. Our work concentrates on the theoretical investigation of the relationships between structural motifs, band structures and STM patterns. Thereby, we show how an approach beyond local density functional theory, including both spin-orbit coupling and dispersion, is crucial for the correct modelling of the system.
[1] Jin et al, Phys Rev B 93, 075308 (2016)
[2] Kim et al, ACS Nano 11, 9671 (2017)
[3] Flammini et al, Nanotechnology 29, 065704 (2018)
[4] Hogan et al, ACS Nano 13, 10481 (2019)