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O: Fachverband Oberflächenphysik
O 106: Frontiers in Electronic-Structure Theory - Focus on Electron-Phonon Interactions V (joint session O/CPP/DS/HL)
O 106.9: Vortrag
Donnerstag, 19. März 2020, 17:15–17:30, GER 38
Electronic structure of β-SiAlON: effect of Al/O doping and of finite temperature — •Saleem Ayaz Khan1, Ondrej Šipr2, Jiří Vackář2, Robin Niklaus3, Wolfgang Schnick3, and Jan Minár1 — 1University of West Bohemia, Plzen, Czech Republic — 2Institute of Physics of the Czech Academy of Sciences, Prague, Czech Republic — 3LMU Munich, Germany
Electronic structure of a series of ordered and disordered β-Si_{6-z}Al_{z}O_{z}N_{8-z} systems is investigated by means of ab initio calculations, using the FLAPW method as implemented in the wien2k code and Green function KKR method as implemented in the SPR-KKR code. Finite temperature effects are included within the alloy analogy model. We found that the trends with the Al/O doping are similar for ordered and disordered structures. The electronic band gap decreases with increasing z by about 1 eV when going from z=0 to z=2. The optical gap decreases analogously as the electronic band gap. The changes in the density of states (DOS) at Si and N atoms introduced by doping β-Si_{3}N_{4} with Al and O are comparable to the DOS at Al and O atoms themselves. The bottom of the conduction band in β-Si_{6-z}Al_{z}O_{z}N_{8-z} is formed by extended states residing on all atomic types. Increasing the temperature leads to a shift of the bottom of the conduction band to lower energies. The amount of this shift increases with increasing doping z.