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O: Fachverband Oberflächenphysik
O 107: Semiconductor Surfaces (joint session O/HL)
O 107.3: Vortrag
Donnerstag, 19. März 2020, 15:30–15:45, REC C 213
Structural and Electronic Properties of the FeSi(110) Surface — •Biao Yang1, Martin Uphoff1, Yi-Qi Zhang1, Joachim Reichert1, Ari P. Seitsonen2, Andreas Bauer3, Christian Pfleiderer3, and Johannes V. Barth1 — 1Physics Department E20, Technical University of Munich, D-85748 Garching, Germany — 2Département de Chimie, École Normale Supréieure, 24 rue Lhomond, F-75005 Paris, France — 3Physics Department E51, Technical University of Munich, D-85748 Garching, Germany
Iron silicide (FeSi) is a fascinating material which has attracted numerous research efforts for decades.[1] It has B20 crystal structure featuring cubic unit cell without an inversion center. To gain insight into the unusual surface properties of this system, we successfully prepare the atomically flat FeSi(110) surface with the Ar ion sputtering and annealing treatment. By scanning tunneling microscopy (STM), we clearly resolve a step-terrace topography and the details of the atomic lattice. The atomically resolved STM images and DFT calculations give strong indications for the surface termination, where the topmost comprises of one Fe and one Si atom. Furthermore, a small energy gap of 80 meV close to the Fermi level is derived by scanning tunneling spectroscopy (STS). Intriguingly, two in-gap states are identified for the first time. References 1. V. Jaccarino, G. K. Wertheim, J. H. Wernick, L. R. Walker, S. Arajs. Phys. Rev. 1967, 160, 476.