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O: Fachverband Oberflächenphysik
O 124: Development of Novel Methods II
O 124.3: Vortrag
Freitag, 20. März 2020, 11:00–11:15, WIL C107
Observation of bulk electronic states with HAXPES on the heavy fermion system YbRh2Si2 — •Steinn Ymir Agustsson1, Sergey Chernov1, Sergey Babenkov1, Olena Fedchenko1, Dmitry Vasilyev1, Katerina Medjanik1, Christoph Schlueter2, Andrei Gloskovskii2, Yury Matveyev2, Kristin Kliemt3, Cornelius Krellner3, Gerd Schoenhense1, Jure Demsar1, and Hans-Joachim Elmers1 — 1JGU Mainz — 2DESY Hamburg — 3Goethe Universität Frankfurt
The study of elastic strain induced effects on strongly correlated systems requires in situ mechanical deformations, which is best achieved with bulk single crystal samples. Observation of the electronic band structures using low energy photoemission techniques, however, requires additional surface cleaning methods, such as cleaving, which result challenging in combination with applying mechanical deformation. We demonstrate the use of hard x-ray photoemission (HAXPES) as an effective probe for observing bulk electronic band structures, overcoming the surface quality bottleneck, on the prototypical heavy fermion (HF) system YbRh2Si2. We successfully observed bulk states at the Fermi surface, probed with 5keV photons in a time-of-flight momentum microscope spectrometer at different temperatures. Our results agree with previous low energy photoemission experiments as well as with ab-initio calculations, and highlight the changes in the hybridized valence band and Yb 4f band dispersions between 25K and 300K.