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O: Fachverband Oberflächenphysik

O 124: Development of Novel Methods II

O 124.3: Vortrag

Freitag, 20. März 2020, 11:00–11:15, WIL C107

Observation of bulk electronic states with HAXPES on the heavy fermion system YbRh2Si2 — •Steinn Ymir Agustsson¹, Sergey Chernov¹, Sergey Babenkov¹, Olena Fedchenko¹, Dmitry Vasilyev¹, Katerina Medjanik¹, Christoph Schlueter², Andrei Gloskovskii², Yury Matveyev², Kristin Kliemt³, Cornelius Krellner³, Gerd Schoenhense¹, Jure Demsar¹, and Hans-Joachim Elmers¹ — ¹JGU Mainz — ²DESY Hamburg — ³Goethe Universität Frankfurt

The study of elastic strain induced effects on strongly correlated systems requires in situ mechanical deformations, which is best achieved with bulk single crystal samples. Observation of the electronic band structures using low energy photoemission techniques, however, requires additional surface cleaning methods, such as cleaving, which result challenging in combination with applying mechanical deformation. We demonstrate the use of hard x-ray photoemission (HAXPES) as an effective probe for observing bulk electronic band structures, overcoming the surface quality bottleneck, on the prototypical heavy fermion (HF) system YbRh2Si2. We successfully observed bulk states at the Fermi surface, probed with 5keV photons in a time-of-flight momentum microscope spectrometer at different temperatures. Our results agree with previous low energy photoemission experiments as well as with ab-initio calculations, and highlight the changes in the hybridized valence band and Yb 4f band dispersions between 25K and 300K.