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O: Fachverband Oberflächenphysik

O 2: Heterostructures, interfaces and surfaces (joint session HL/O)

O 2.10: Vortrag

Montag, 16. März 2020, 12:30–12:45, POT 151

Copper iodide thin films: Dynamic AFM studies of local electrical properties — •Tillmann Stralka, Chang Yang, Holger von Wenckstern, and Marius Grundmann — Solid State Physics, Leipzig, Germany

The search for high-performance p-type transparent conductive materials has been a major challenge in decades [1]. Copper iodide (CuI) or alloys based on CuI [2] could offer a solution, since CuI does outperform all other known p-type TCMs, concerning transmittance in the visible spectrum as well as electrical conductivity at room temperature [3]. In this contribution polycrystalline CuI thin films grown by sputtering, are investigated. Hereby we try to understand the impact of grains and grain boundaries (GBs) on transport mechanisms. Topographic features as GBs lead to a depletion of majority charge carriers and even a localized inversion (two dimensional electron gas) within GBs [4]. To acquire morphological and electrical properties with a high spatial resolution we employ atomic force microscopy, which additionally offers different modes to characterize electrical properties (such as: capacitance, conductivity and work function). These measurements will be conducted and evaluated with a novel approach that offers voltage spectroscopy and localization of sub-nm sized objects at the same time and furthermore correlate topographic features with electrical properties.

[1] M. Grundmann et al., J.Phys.D.Apps.Phys., 49(213001), 2016 [2] T. Jun et al., Adv. Mater. 30(1706573), 2018 [3] C. Yang et al., PNAS 113(412929) [4] M. Kneiß et al., Adv. Mater. Interfaces, 5(6), 2018