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O: Fachverband Oberflächenphysik

O 2: Heterostructures, interfaces and surfaces (joint session HL/O)

O 2.8: Vortrag

Montag, 16. März 2020, 12:00–12:15, POT 151

Correlation of optical properties and interface morphology in type-II semiconductor heterostructures — •Luise Rost, Jannick Lehr, Milan Maradiya, Wolfgang Stolz, and Wolfram Heimbrodt — Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, Germany

The (Ga,In)As/GaAs/Ga(As,Sb) material system is used for lasers operating over a wide spectral range in the infrared. To further optimize the design of such heterostructures, it is important to have deep understanding of the influence of the interface morphology and the charge carrier dynamic through the interface. Here (Ga,In)As/GaAs/Ga(As,Sb) type-II double quantum well heterostructures has been grown by metall-organic vapor phase epitaxy. A growth interruption procedure was used to intentionally modify the morphology of the internal interfaces. The heterostructures were investigated using continuous wave and time-resolved photoluminescence spectroscopy. A correlation was revealed between the interface morphology and optical and kinetic properties. AFM images of the as grown interface surfaces show substantially smoother interfaces both on vertical as well as lateral length scales. We will illustrate that for every used material there is a matching growth interruption time to further enhance the optical response of such a type-II heterostructure.