Dresden 2020 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 22: Poster Session - 2D Materials Beyond Graphene: Growth, Structure and Substrate Interaction
O 22.8: Poster
Montag, 16. März 2020, 18:15–20:00, P1A
Growth of transition metal dichalcogenides on hBN — •Ziyang Gan1, Emad Najafidehaghani1, Zian Tang1, Johannes Holler2, Antony George1, Kenji Watanabe3, Takashi Taniguchi3, Christian Schüller2, Tobias Korn4, and Andrey Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, D-07743 Jena, Germany — 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — 3National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan — 4Institut für Physik, Universität Rostock', D-18059 Rostock, Germany
Monolayer transition metal dichalcogenides (TMD) have emerged as versatile materials with the potential to be applied in next-generation electronics and optoelectronics devices owing to their attractive physical properties such as direct bandgap, spin-coupled valley degrees of freedom, etc. High quality TMDs can be synthesized by chemical vapor deposition (CVD) on Si substrates. However, the as grown monolayers show poor optical quality due to the detrimental interaction with the dielectric environment of the substrate. It has been shown recently that encapsulation in hexagonal boron nitride (hBN) is crucial to access the intrinsic optical quality of CVD grown monolayer TMDs. This motivates us to develop growth procedures for direct growth of monolayer TMDs on exfoliated and CVD grown hBN layers. The grown TMDs on hBN were characterized using optical microscopy, atomic force microscopy, Raman spectroscopy and photoluminescence spectroscopy to reveal their morphological, structural and optical properties.