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O 2: Heterostructures, interfaces and surfaces (joint session HL/O)
Montag, 16. März 2020, 09:30–13:00, POT 151
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09:30 |
O 2.1 |
Determining the band alignment of copper oxide-gallium oxide heterostructures — •Sebastian Leonard Benz, Martin Becker, Angelika Polity, Sangam Chatterjee, and Peter Jens Klar
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09:45 |
O 2.2 |
Nanometer Scale Characterization of Al/TiOx/SiOx Electron Selective Passivating Contacts Utilizing Advanced TEM Methods — •Christoph Flathmann, Tobias Meyer, Valeriya Titova, Jan Schmidt, and Michael Seibt
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10:00 |
O 2.3 |
direct insight into the structure-property relation of interfaces from first-principles crystal structure prediction — •lin sun, miguel a. l. marques, and silvana botti
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10:15 |
O 2.4 |
Effect of KF and RbF post-deposition treatments on the electronic structure of the CdS/Cu(In,Ga)Se2 interface in thin-film solar cells investigated by Kelvin Probe and Photoelectron Yield Spectroscopy — •Marin Rusu, Tim Kodalle, Leo Choubrac, Sergiu Levcenco, Nicolas Barreau, Christian Kaufmann, Rutger Schlatmann, and Thomas Unold
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10:30 |
O 2.5 |
The contribution has been withdrawn.
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10:45 |
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30 min. break.
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11:15 |
O 2.6 |
Hauptvortrag:
Exciton-Polariton Topological Insulator — •Sebastian Klembt
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11:45 |
O 2.7 |
Quantum spin Hall quantum point contacts — •niccolo traverso ziani, bjoern trauzettel, christoph fleckenstein, lorenzo privitera, and maura sassetti
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12:00 |
O 2.8 |
Correlation of optical properties and interface morphology in type-II semiconductor heterostructures — •Luise Rost, Jannick Lehr, Milan Maradiya, Wolfgang Stolz, and Wolfram Heimbrodt
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12:15 |
O 2.9 |
First-principles study of the structural and electronic properties of the GaAsxP1-x surface — •Marsel Karmo and Erich Runge
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12:30 |
O 2.10 |
Copper iodide thin films: Dynamic AFM studies of local electrical properties — •Tillmann Stralka, Chang Yang, Holger von Wenckstern, and Marius Grundmann
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12:45 |
O 2.11 |
Stability and Tunneling Transport Properties of NiSi2-Si Interfaces — •Florian Fuchs, Sibylle Gemming, and Jörg Schuster
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