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O: Fachverband Oberflächenphysik
O 3: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)
O 3.11: Vortrag
Montag, 16. März 2020, 12:30–12:45, POT 81
Characterization of interlayer excitons in MoSe2-WSe2 heterostructures in high magnetic fields — •Johannes Holler1, Michael Kempf3, Jonas Zipfel1, Mariana Ballottin2, Anatolie Mitioglu2, Philipp Nagler1, Michael Högen1, Alexey Chernikov1, Peter Christianen2, Christian Schüller1, and Tobias Korn3 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany — 2High Field Magnet Laboratory (HFML EMFL), Radboud University Nijmegen, Netherlands — 3Institut für Physik, Universität Rostock, Germany
In the recent years, the research on transition-metal dichalchogenides (TMDCs) and especially their heterostructures has increased a lot. These heterostructures are fabricated by stacking two different TMDCs on top of each other. With the right material combination, a type-II band alignment can be achieved and electrons and holes are spatially separated forming so-called interlayer excitons (IEXs).
Here, we study these IEXs in MoSe2-WSe2 heterostructures. In low-temperature PL measurements in magnetic fields of up to 30T, we observe a giant valley-selective splitting and a resulting near-unity valley polarization. In time-resolved measurements, we track the buildup of IEX valley polarization in the magnetic field. We also find a clear dependence of the magnetic-field behavior of the IEX on the stacking angles.