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O: Fachverband Oberflächenphysik

O 36: 2D Materials and their Heterostructures I (joint session DS/HL/O)

O 36.4: Vortrag

Dienstag, 17. März 2020, 10:15–10:30, CHE 89

Electrical Properties and Doping effects of Chemical Vapor Deposition Growth Layered MoS2 Transistor on Different Back gate oxide Substrates — •Ying-Chun Shen and Yu-Lun Chueh — Department of Materials Science and Engineering National Tsing-Hua University 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, R. O. C

Recently, there have been many research evolvements in the transition-metal dichalcogenides (TMDCs) materials, which are featured by exotic properties of single or a few layers derivative in terms of direct or indirect bandgap, mechanical or electrochemical behavior. In addition to the pristine properties, the chemical and physical features of TMDCs can be controllably tuned by either nano-structure or dopants. Due to the nature of the TMDCs, they have been the promising candidates of the next-generation semiconductor devices. In our study, we have demonstrated the chemical vapor deposition growth layered MoS2 transistors on different back gate oxide substrates, such as SiO2, HfO*2 and Al2O3. Among these three substrates, HfO2 based MoS2 transistor exhibits the best performance, e.g., higher drain current up to 10 mA, on-off ratio about 106, stable mobility around 20 cm2/ V* s. Furthermore, we performed the doping effect by adding metal ions, and investigate the ion influence on the MoS2 transistor. Moreover, we also compared the electrical performance of distinct metal ions and the number of ions. Here, we provide not only the properties of back gate oxide selection but also a roadmap of ion doping effect to boost the electrical characteristics of the MoS2 transistors.