Dresden 2020 – scientific programme
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O: Fachverband Oberflächenphysik
O 36: 2D Materials and their Heterostructures I (joint session DS/HL/O)
O 36.6: Talk
Tuesday, March 17, 2020, 10:45–11:00, CHE 89
Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening — •Malte Rösner1, Lutz Waldecker2,3, Archana Raja4,5, Christina Steinke6, Aaron Bostwick4, Roland J. Koch4, Chris Jozwiak4, Takashi Taniguchi7, Kenji Watanabe7, Eli Rotenberg4, Tim O. Wehling6, and Tony F. Heinz2,3 — 1Institute for Molecules and Materials, Radboud University, Netherlands — 2Department of Applied Physics, Stanford University, USA — 3SLAC National Accelerator Laboratory, USA — 4Lawrence Berkeley National Laboratory, USA — 5Kavli Energy NanoScience Institute, University of California Berkeley, USA — 6Institute for Theoretical Physics, University of Bremen, Germany — 7National Institute for Materials Science, Japan
We investigate the effects of external dielectric screening on the electronic dispersion and the band gap in the atomically thin, quasi-two-dimensional (2D) semiconductor WS2 using angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased external dielectric screening to be a reduction of the quasiparticle band gap, with rigid shifts to the bands themselves. Specifically, the band gap of monolayer WS2 is decreased by about 140 meV on a graphite substrate as compared to a hexagonal boron nitride substrate, while the electronic dispersion of WS2 remains unchanged within our experimental precision of 17 meV. These essentially rigid shifts of the valence and conduction bands result from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment of the monolayer.