Dresden 2020 – scientific programme
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O: Fachverband Oberflächenphysik
O 46: 2D semiconductors and van der Waals heterostructures IV (joint session HL/DS/O)
O 46.4: Talk
Tuesday, March 17, 2020, 14:45–15:00, POT 81
MOVPE of large-scale 2D-2D heterostructures for optoelectronic applications — Annika Grundmann1, Clifford McAleese2, Ben Richard Conran2, Andrew Pakes2, Dominik Andrzejewski3, Tilmar Kümmel3, Gerd Bacher3, Kenneth Bo Khin Teo2, •Michael Heuken1,4, Holger Kalisch1, and Andrei Vescan1 — 1Compound Semiconductor Technology, RWTH Aachen University, Aachen, Germany — 2AIXTRON Ltd., Cambridge, United Kingdom — 3Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Duisburg, Germany — 4AIXTRON SE, Herzogenrath, Germany
Vertical heterostructures of two (or more) different 2D layer provide many fascinating opportunities by combining the unique intrinsic chemical, physical and (opto)electronic properties of 2D materials. Without the need of consideration of lattice matching, a nearly infinite number of potential combinations of 2D layers are possible. Transition metal dichalcogenide (TMDC) monolayers are the most widely studied 2D semiconductors beyond graphene and thus provide a strong basis for understanding the properties of 2D heterostructures. Unlike mechanical exfoliation, direct successive growth of 2D-2D heterostructures requires a controlled synthesis of the respective monolayers with pristine interlayer interfaces and no intermixing of disparate layers. Here, we report on direct successive MOCVD of vertical MoS2-WS2 and WS2-MoS2 heterostructures as well as MOCVD of WS2 and MoS2 onto graphene previously deposited in another MOCVD reactor.